Effect of Temperature on the Electric Power of Si InAs and GaAs Based Solar Cells - International Journal of Trend in Scientific Research and Development

IJTSRD is a leading Open Access, Peer-Reviewed International Journal which provides rapid publication of your research articles and aims to promote the theory and practice along with knowledge sharing between researchers, developers, engineers, students, and practitioners working in and around the world in many areas. For any further information, feel free to write us on editor.ijtsrd@gmail.com

Thursday, 5 March 2020

Effect of Temperature on the Electric Power of Si InAs and GaAs Based Solar Cells


The electrical power is a nominal quantity which indicates the performance of the solar panels. It depends on the sunshine and also on the properties of the material used. In this work we are interested in the properties of materials to study the evolution of electrical power as a function of the temperature of the following cells based on Si silicon, InAs indium arsenide and GaAs gallium arsenide . 


by Nfally Dieme | Moustapha Sane | Prince Abdoul Aziz Honadia | Fabé. Idrissa Barro ""Effect of Temperature on the Electric Power of Si, InAs and GaAs Based Solar Cells""

Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-3 , April 2020,

URL: https://www.ijtsrd.com/papers/ijtsrd30241.pdf

Paper Url :https://www.ijtsrd.com/physics/engineering-physics/30241/effect-of-temperature-on-the-electric-power-of-si-inas-and-gaas-based-solar-cells/nfally-dieme

callforpapermedicalscience, medicalsciencejournal, manuscriptsubmission

No comments:

Post a Comment

Ad